30V P-Channel PowerTrench MOSFET 11 A, 30 V RDS(ON) = 13 mΩ @ VGS = 10 V
RDS(ON) = 19 mΩ @ VGS = 4.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
